Scandium nitride
Scandium nitride (ScN) is a binary III-V indirect bandgap semiconductor. It is composed of the scandium cation and the nitride anion. It forms crystals that can be grown on tungsten foil through sublimation and recondensation.[1] It has a rock-salt crystal structure with lattice constant of 0.451 nanometer, an indirect bandgap of 0.9 eV and direct bandgap of 2 to 2.4 eV.[1][2] These crystals can be synthesized by dissolving nitrogen gas with indium-scandium melts, magnetron sputtering, MBE, HVPE and other deposition methods.[2][3] Scandium Nitride Scandium nitride is also an effective gate for semiconductors on a silicon dioxide (SiO2) or hafnium dioxide (HfO2) substrate.[4]
| Names | |
|---|---|
| IUPAC name
Scandium nitride | |
| Other names
Azanylidynescandium Nitridoscandium | |
| Identifiers | |
3D model (JSmol) |
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| ChemSpider | |
| ECHA InfoCard | 100.042.938  |
| EC Number |
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PubChem CID |
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CompTox Dashboard (EPA) |
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| Properties | |
| ScN | |
| Molar mass | 58.963 |
| Density | 4.4 g/cm3 |
| Melting point | 2,600 °C (4,710 °F; 2,870 K) |
| Hazards | |
| GHS pictograms |  |
| GHS Signal word | Danger |
| H228 | |
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa). | |
| Infobox references | |
References
- Gu, Zheng; Edgar, J H; Pomeroy, J; Kuball, M; Coffey, D W (August 2004). "Crystal Growth and Properties of Scandium Nitride". Journal of Materials Science: Materials in Electronics. 15 (8): 555–559. doi:10.1023/B:JMSE.0000032591.54107.2c. S2CID 98462001.
- Biswas, Bidesh; Saha, Bivas (2019-02-14). "Development of semiconducting ScN". Physical Review Materials. 3 (2). doi:10.1103/physrevmaterials.3.020301. ISSN 2475-9953.
- Zhang, Guodong; Kawamura, Fumio; Oshima, Yuichi; Villora, Encarnacion; Shimamura, Kiyoshi (4 August 2016). "Synthesis of Scandium Nitride Crystals from Indium–Scandium Melts". Applied Ceramic Technology. 13 (6): 1134–1138. doi:10.1111/ijac.12576.
- Yang, Hyundoek; Heo, Sungho; Lee, Dongkyu; Choi, Sangmoo; Hwang, Hyunsang (13 January 2006). "Effective Work Function of Scandium Nitride Gate Electrodes on SiO2 and HfO2". Japanese Journal of Applied Physics. 45 (2): L83–L85. doi:10.1143/JJAP.45.L83.
| NH3 N2H4 |
He(N2)11 | ||||||||||||||||
| Li3N | Be3N2 | BN | β-C3N4 g-C3N4 CxNy |
N2 | NxOy | NF3 | Ne | ||||||||||
| Na3N | Mg3N2 | AlN | Si3N4 | PN P3N5 |
SxNy SN S4N4 |
NCl3 | Ar | ||||||||||
| K | Ca3N2 | ScN | TiN | VN | CrN Cr2N |
MnxNy | FexNy | CoN | Ni3N | CuN | Zn3N2 | GaN | Ge3N4 | As | Se | NBr3 | Kr |
| Rb | Sr3N2 | YN | ZrN | NbN | β-Mo2N | Tc | Ru | Rh | PdN | Ag3N | CdN | InN | Sn | Sb | Te | NI3 | Xe |
| Cs | Ba3N2 | Hf3N4 | TaN | WN | Re | Os | Ir | Pt | Au | Hg3N2 | TlN | Pb | BiN | Po | At | Rn | |
| Fr | Ra3N2 | Rf | Db | Sg | Bh | Hs | Mt | Ds | Rg | Cn | Nh | Fl | Mc | Lv | Ts | Og | |
| ↓ | |||||||||||||||||
| La | CeN | Pr | Nd | Pm | Sm | Eu | GdN | Tb | Dy | Ho | Er | Tm | Yb | Lu | |||
| Ac | Th | Pa | UN | Np | Pu | Am | Cm | Bk | Cf | Es | Fm | Md | No | Lr | |||
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